Selective-area chemical-vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation
نویسندگان
چکیده
Silicon nitride (Si3N4) is a very robust material against oxidation and is typically used as an oxidation mask. Here, we report atomic-force microscope ~AFM!-based local oxidation of Si3N4 and its applications in selective-area epitaxial growth using chemical-vapor deposition. High growth selectivity is accomplished in this work by employing a SiO2 /Si3N4 bilayer mask structure, which is formed by locally oxidizing the Si3N4 surface ~for defining the growth windows!, depositing a blanket SiO2 layer, and then selectively removing SiO2 in the growth windows. High-resolution transmission electron microscopy images reveal that the selectively deposited Si structures can be grown with a high degree of crystalline perfection, while excellent size uniformity is confirmed by large-area AFM images. © 2001 American Vacuum Society. @DOI: 10.1116/1.1342869#
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